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Journal


2024

  1. Gwangmin Kim†, Jae Hyun In†, Younghyun Lee†, Hakseung Rhee, Woojoon Park, Hanchan Song, Juseong Park, Jae Bum Jeon, Thimothy D. Brown, A. Alec Talin, Suhas Kumar*, and Kyung Min Kim*
    “Mott Neurons with Dual Thermal Dynamics for Spatiotemporal Computing”
    Nature Materials, Accepted
  1. Hanchan Song†, Woojoon Park†, Gwangmin Kim, Moon Gu Choi, Jae Hyun In, Hakseung Rhee, and Kyung Min Kim*
    “Memristive Explainable Artificial Intelligence Hardware”
    Advanced Materials, 2400977 (2024) [Link]
  1. Hanchan Song†, Min Gu Lee†, Gwangmin Kim, Do Hoon Kim, Geunyoung Kim, Woojoon Park, Hakseung Rhee, Jae Hyun In, and Kyung Min Kim*
    “Fully Memristive Elementary Motion Detectors for a Maneuver Prediction”
    Advanced Materials, 02309708 (2024) [Link]


2023

  1. Hye-In Yeom†, Jingyu Kim, Guk-Jin Jeon, Jeongwoo Park, Dong Uk Han, Joohyeong Kim, Kyung Min Kim, Bonggeun Shong, and Sang-Hee Ko Park*
    “High-performance oxide thin-film diode and its conduction mechanism based on ALD-assisted interface engineering”
    Journal of Materials Chemistry C, 11 (4), 1336-1345 (2023) [Link]
  1. Hakseung Rhee†, Gwangmin Kim, Hanchan Song, Woojoon Park, Do Hoon Kim, Jae Hyun In, Younghyun Lee, and Kyung Min Kim*
    “Probabilistic computing with NbOx metal-insulator transition-based self-oscillatory pbit”
    Nature Communications, 14, 7199 (2023) [Link]
  1. Geunyoung Kim†, Younghyun Lee, Jae Bum Jeon, Woon Hyung Cheong, Woojoon Park, Hanchan Song, and Kyung Min Kim*
    “Threshold Modulative Artificial GABAergic Nociceptor”
    Advanced Materials, 35 (47), 2304148 (2023) [Link]
  1. Jungkyun Kim†, Hakseung Rhee†, Myeong Won Son, Juseong Park, Gwangmin Kim, Jae Bum Jeon, Hanchan Song, Geunwoo Kim, Byong-Guk Park, Jeong Hwan Han*, and Kyung Min Kim*
    “Electromigration Reliability of Barrierless Ruthenium and Molybdenum for Sub-10 nm Interconnection”
    ACS Applied Electronic Materials, 5 (5), 2447–2453 (2023) [Link]
  1. Gisu Doo†, Juseong Park, Jeesoo Park, Jiyun Heo, Jinkwan Jung, Dong Wook Lee, Hanmin Bae, Jonghyun Hyun, Euntaek Oh, Jiyun Kwen, Kyung Min Kim, and Hee-Tak Kim*
    “Contact Problems of IrOx Anodes in Polymer Electrolyte Membrane Water Electrolysis”
    ACS Energy Letters, 8 (5), 2214–2220 (2023) [Link]
  1. Juseong Park†, Sukkyung Kang†, Myeong Eun Kim, Nam Jun Kim, Jungkyun Kim, Sanha Kim*, and Kyung Min Kim*
    “Advanced Cu/Polymer Hybrid Bonding System for Fine-Pitch 3D Stacking Devices”
    Advanced Materials Technologies, 8 (20), 2202134 (2023) [Link]
  1. Woojoon Park†, Gwangmin Kim, Jae Hyun In, Hakseung Rhee, Hanchan Song, Juseong Park, Alba Martinez, and Kyung Min Kim*
    “High Amplitude Spike Generator in Au Nanodot-Incorporated NbOx Mott Memristor”
    Nano Letters, 23 (11), 5399−5407 (2023) [Link]
  1. Eun Chong Ko†, Jae Yeon Kim, Hakseung Rhee, Kyung Min Kim, Jeong Hwan Han*
    “Low-resistivity ruthenium metal thin films grown via atomic layer deposition using dicarbonyl-bis(5-methyl-2,4-hexanediketonato)ruthenium (II) and oxygen”
    Materials Science in Semiconductor Processing, 156, 107258 (2023) [Link]

2022

  1. Geunyoung Kim†, Seoil Son†, Hanchan Song, Jae Bum Jeon, Jiyun Lee, Woon Hyung Cheong, Shinhyun Choi, and Kyung Min Kim*
    “Retention secured nonlinear and self-rectifying analog charge trap memristor for energy-efficient neuromorphic hardware”
    Advanced Science, 10 (3), 2205654 (2022) [Link]
  2. Juseong Park†, Jungwoo Choi, Gwangmin Kim, Geunyoung Kim, Gil Seop Kim, Hanchan Song, Yeong Seok Kim, Younghyun Lee, Hakseung Rhee, Hyuck Mo Lee, Cheol Seong Hwang, and Kyung Min Kim*
    “Modified dynamic physical model of valence change mechanism memristors”
    ACS Applied Materials & Interfaces, 14 (31), 35949-35958 (2022) [Link]
  3. Jang Hwan Kim†, Suwan Jeon, Jae Hyun In, Seonho Nam, Hyeong Min Jin, Kyu Hyo Han, Geon Gug Yang, Hee Jae Choi, Kyung Min Kim, Jonghwa Shin, Seung-Woo Son, Seok Joon Kwon*, Bong Hoon Kim*, and Sang Ouk KIm*
    “Nanoscale physical unclonable function labels based on block co-polymer self-assembly”
    Nature Electronics, 5, 433-442 (2022) [Link]
  4. Do Hoon Kim†, Young Seok Kim, Woon Hyung Cheong, Hanchan Song, Hakseung Rhee, Sooyeon Narie Kay, Jin-Woo Han, and Kyung Min Kim*
    “Evolutionary Learning of Binary Neural Network Using a TaOx Memristor via Stochastic Stateful Logic”
    Advanced Intelligent Systems, 4 (9), 2200058 (2022) [Link]
  5. [Front Cover] Hyung Seok Shin†, Hanchan Song†, Do Hoon Kim, Alba Martinez, Woon Hyung Cheong, and Kyung Min Kim*
    “Multimode Synaptic Operation of a HfAlOx-Based Memristor as a Metaplastic Device for Neuromorphic Applications”
    ACS Applied Electronic Materials, 4 (8), 3786–3793 (2022) [Link]
  6. [Back Cover] Woon Hyung Cheong†, Jae Bum Jeon†, Jae Hyun In, Geunyoung Kim, Hanchan Song, Jangho An, Juseong Park, Young Seok Kim, Cheol Seong Hwang*, and Kyung Min Kim*
    “Demonstration of Neuromodulation-inspired Stashing System for Energy-efficient Learning of Spiking Neural Network using a Self-Rectifying Memristor Array”
    Advanced Functional Materials, 32 (29), 2200337 (2022) [Link]

2021

  1. Young Seok Kim†, Jangho An, Jae Bum Jeon, Myeong Won Son, Seoil Son, Woojoon Park, Younghyun Lee, Juseong Park, Geun Young Kim, Gwangmin Kim, Hanchan Song and Kyung Min Kim*
    “Ternary logic with Stateful Neural Networks using a bilayered TaOx-based memristor exhibiting ternary states”
    Advanced Science, 9 (5), 2104107 (2021) [Link]
  2. Seong-In Cho†, Jae Bum Jeon, Joo Hyung Kim, Seung Hee Lee, Wooseok Jeong, Jingyu Kim, Geunyoung Kim, Kyung Min Kim*, and Sang-Hee Ko Park*
    “Synaptic transistors with human brain-like fJ energy consumption via double oxide semiconductor engineering for neuromorphic electronics”
    Journal of Materials Chemistry C, 9, 10243-10253 (2021) [Link]
  3. Wonkyu Kang†, Kyoungmin Woo, Hyon Bin Na, Chi Jung Kang, Tae-Sik Yoon, Kyung Min Kim, and Hyun Ho Lee*
    “Analog Memristive Characteristics of Square Shaped Lanthanum Oxide Nanoplates Layered Device”
    Nanomaterials, 11 (2), 441 (2021) [Link]
  4. Gwangmin Kim†, Jae Hyun In†, Young Seok Kim, Hakseung Rhee, Woojoon Park, Hanchan Song, Juseong Park, and Kyung Min Kim*
    “Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor”
    Nature Communications, 12, 2906 (2021) [Link]
  5. Young Seok Kim†, Myeong Won Son, and Kyung Min Kim*
    “Memristive Stateful Logic for Edge Boolean Computer”
    Advanced Intelligent Systems, 3(7), 2000278 (2021) [Link]

2020

  1. Jae Hyun In†, Young Seok Kim, Hanchan Song, Gwang Min Kim, Jangho An, Jae Bum Jeon, and Kyung Min Kim*
    “A Universal Error Correction Method for Memristive Stateful Logic Devices for Practical Near-Memory Computing”
    Advanced Intelligent Systems, 2 (9), 2000081 (2020) [Link]
  2. Hanchan Song†, Jangho An, Seoil Son, Young Seok Kim, Juseong Park, Jae Bum Jeon, Geun Young Kim, and Kyung Min Kim*
    “Parallel operation of Self-Limited Analog Programming for Fast Array-Level Weight Programming and Update”
    Advanced Intelligent Systems, 2 (7), 2000014 (2020) (Editors’ choice) [Link]
  3. Young Seok Kim†, Myeong Won Son, Hanchan Song, Juseong Park, Jangho An, Jae Bum Jeon, Geun Young Kim, Seoil Son, and Kyung Min Kim*
    “Stateful In‐memory Logic System and Its Practical Implementation in a TaOx‐based Bipolar‐type Memristive Crossbar Array”
    Advanced Intelligent Systems, 2 (3), 1900156 (2020) [Link]

2019

  1. Gil Seop Kim†, Hanchan Song†, Yoon Kyeung Lee, Ji Hun Kim, Woohyun Kim, Taehyung Park, Hae Jin Kim, Kyung Min Kim*, and Cheol Seong Hwang*
    “Defect engineered electroforming-free analog HfOx memristor and its application to the neural network”
    ACS Applied Materials & Interfaces. 11, 47063-47072 (2019) [Link]
  2. Nuo Xu†, Tae Gyun Park†, Hae Jin Kim, Xinglong Shao,  Kyung Jean Yoon, Tae Hyung Park, Liang Fang, Kyung Min Kim*, and Cheol Seong Hwang*
    “A Stateful Logic Family Based on a New Logic Primitive Circuit composed of Two Antiparallel Bipolar Memristors”
    Advanced Intelligent Systems. 2, 1900082 (2019) [Link]
  3. Kyung Min Kim†, and R. S. Williams*
    “A Family of Stateful Memristor Gates for Complete Cascading Logic”
    IEEE Trans. Circuits Syst. I Regul. Pap., vol. 66, pp. 4348 (2019) [Link]
  4. [Back Cover] Hanchan Song†, Young Seok Kim, Juseong Park, and Kyung Min Kim*
    “Designed Memristor Circuit for Self-limited Analog Switching and its Application to Memristive Neural Network”
    Advanced Electronic Materials, 10.1002/aelm.201800740 (2019) [Link]
  5.  Nuo Xu†, Liang Fang, Kyung Min Kim, and Cheol Seong Hwang*
    “Time-Efficient Stateful Dual-Bit-Memristor Logic”
    Rapid Research Letter, 10.1002/pssr.201900033 (2019) [Link]

2018

  1.  Kyung Min Kim†, Nuo Xu†, Xinglong Shao, Kyung Jean Yoon, Hae Jin Kim, R. Stanley Williams*, and Cheol Seong Hwang*
    “Single-Cell Stateful Logic Using a Dual-bit Memristor”
    Rapid Research Letter, 10.1002/pssr.201800629 (2018) [Link]
  2.  Nuo Xu†, Kyung Jean Yoon†, Kyung Min Kim†, Liang Fang, and Cheol Seong Hwang*
    “Fully Functional Logic-In-Memory Operations Based on a Reconfigurable Finite-State Machine Using a Single Memristor”
    Advanced Electronic Materials, 10.1002/aelm.201800189 (2018) [Link]
  3.  Jung Ho Yoon†, Zhongrui Wang, Kyung Min Kim, Huaqiang Wu, Vignesh Ravichandran, Qiangfei Xia, Cheol Seong Hwang*, and J Joshua Yang*
    “An artificial nociceptor based on a diffusive memristor”
    Nature communications 9 (1), 417 (2018) [Link]
  4.  Yumin Kim†, Young Jae Kwon, Dae Eun Kwon, Kyung Jean Yoon, Jung Ho Yoon, Sijung Yoo, Hae Jin Kim, Tae Hyung Park, Jin‐Woo Han, Kyung Min Kim*, and Cheol Seong Hwang*
    “Nociceptive Memristor”
    Advanced Materials, 10.1002/adma.201704320 (2018) [Link]

~2017

  1. Gun Hwan Kim, Hyunsu Ju, Min Kyu Yang, Dong Kyu Lee, Ji Woon Choi, Jae Hyuck Jang, Sang Gil Lee, Ik Su Cha, Bo Keun Park, Jeong Hwan Han, Taek‐Mo Chung, Kyung Min Kim, Cheol Seong Hwang, Young Kuk Lee
    “Four‐Bits‐Per‐Cell Operation in an HfO2‐Based Resistive Switching Device”
    Small 13 (40) (2017)
  2. Kyung Min Kim, Jiaming Zhang, Catherine Graves, J. Joshua Yang, Byung Joon Choi, Cheol Seong Hwang, Zhiyong Li, and R. Stanley Williams
    “Low power, self-rectifying, and forming-free memristor with an asymmetric programing voltage for a high density crossbar application”
    Nano Letters 16, 6724-6732 (2016) – Sep
  3. Doo Seok Jeong*, Kyung Min Kim*, Sungho Kim, Byung Joon Choi, and Cheol Seong Hwang
    “Memristors for Energy-Efficient New Computing Paradigms”
    Advanced Electronic Materials, 10.1002/aelm.201600090 (2016)
  4. Xing Long Shao, Kyung Min Kim, Kyung Jean Yoon, Seul Ji Song, Jung Ho Yoon, Hae Jin Kim, Tae Hyung Park, Dae Eun Kwon, Young Jae Kwon, Yu Min Kim, Xi Wen Hu, Jin Shi Zhao, Cheol Seong Hwang
    “Study of the Transition between the Non-polar and Bipolar Resistance Switching Mechanisms in the TiN/TiO2/Al Memory”
    Nanoscale 8, 16455-16466 (2016)
  5. Kyung Min Kim, J. Joshua Yang, John Paul Strachan, Emmanuelle Merced Grafals, Ning Ge, Noraica Davila Melendez, Zhiyong Li, and R. Stanley Williams
    “Voltage divider effect for the improvement of variability and endurance of TaOx memristor”
    Scientific Reports 6, 20085 (2016) – Feb.
  6. Byung Joon Choi, Jiaming Zhang, Kate Norris, Gary Gibson, Kyung Min Kim, Warren Jackson, Max Zhang, Zhiyong Li, J. Joshua Yang, and R. Stanley Williams
    “Trilayer Tunnel Selectors for Memristor Memory Cells”
    Advanced Materials 28, 326 (2016)
  7. Tae Hyung Park, Seul Ji Song, Hae Jin Kim, Soo Gil Kim, Suock Chung, Beom Yong Kim, Kee Jeung Lee, Kyung Min Kim, Byung Joon Choi, and Cheol Seong Hwang
    “Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell”
    Scientific Reports, 5, 15965 (2015)
  8. Tae Hyung Park, Seul Ji Song, Hae Jin Kim, Soo Gil Kim, Suock Chung, Beom Yong Kim, Kee Jeung Lee, Kyung Min Kim, Byung Joon Choi, and Cheol Seong Hwang
    “Thickness-dependent electroforming behavior of ultra-thin Ta2O5 resistance switching layer”
    Phys. Status Solidi RRL. 9 (6), 362-365 (2015)
  9. Jung Ho Yoon, Kyung Min Kim, Seul Ji Song, Jun Yeong Seok, Kyung Jean Yoon, Dae Eun Kwon, Tae Hyung Park, Young Jae Kwon, Xinglong Shao and Cheol Seong Hwang
    “Pt/Ta2O5/HfO2-x/Ti resistive switching memory competing with multi-level NAND flash”
    Advanced Materials 27 (25), 3811–3816 (2015)
  10. Kyung Min Kim, Joshua Yang, Emmanuelle Merced, Catherine Graves, Sity Lam, Noraica Davila, Miao Hu, Ning Ge, Zhiyong Li, R. Stanley Williams, and Cheol Seong Hwang
    “Low variability resistor-memristor circuit masking the actual memristor states”
    Adv. Electron. Mater. DOI: 10.1002/aelm.201500095 (2015)
  11. Kyung Min Kim, Seung Ryul Lee, Sungho Kim, Man Chang and Cheol Seong Hwang
    “Self-Limited Switching in Ta2O5/TaOx Memristors Exhibiting Uniform Multilevel Changes in Resistance”
    Adv. Funct. Mater. 25, 1527-1534 (2015)
  12. Kyung Min Kim, Tae Hyung Park & Cheol Seong Hwang
    “Dual Conical Conducting Filament Model in Resistance Switching TiO2 Thin Films”
    Sci. Rep. 5, 7844 (2015)
  13. Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon, Kyung Min Kim, Gun Hwan Kim, Min Hwan Lee, Cheol Seong Hwang
    “Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM”
    Sci. Rep. 3, 3443 (2013)
  14. Sungho Kim, Young-Bae Kim, Kyung Min Kim, Sae-Jin Kim, Seung Ryul Lee, Man Chang, Eunju Cho, Myoung-Jae Lee, Dongsoo Lee, Chang Jung Kim, U-In Chung, In-Kyeong Yoo
    “Performance of threshold switching in chalcogenide glass for 3D stackable selector”
    Symposium on VLSI Technology (VLSIT), 2013, pp. T240-T241
  15. Sungho Kim, Sae-Jin Kim, Kyung Min Kim, Seung Ryul Lee, Man Chang, Eunju Cho, Young-Bae Kim, Chang Jung Kim, U.-In Chung & In-Kyeong Yoo
    “Physical electro-thermal model of resistive switching in bi-layered resistance-change memory”
    Sci. Rep. 3, 1680 (2013)
  16. Seong Keun Kim, Kyung Min Kim, Doo Seok Jeong, Woojin Jeon, Kyung Jean Yoon, and Cheol Seong Hwang
    “Titanium dioxide thin films for next-generation memory devices”
    J. Mater. Res. 28, 313 (2013)
  17. Deok-Yong Cho, Seul Ji Song, Un Ki Kim, Kyung Min Kim, Han-Koo Lee and Cheol Seong Hwang
    “Spectroscopic investigation of the hole states in Ni-deficient NiO films”
    J. Mater. Chem. C, 1, 4334-4338 (2013)
  18. Seung Ryul Lee, Young-Bae Kim, Man Chang, Kyung Min Kim, Chang Bum Lee, Ji Hyun Hur, Gyeong-Su Park, Dongsoo Lee, Myoung-Jae Lee, Chang Jung Kim, U-In Chung, In-Kyeong Yoo and Kinam Kim
    “Multi-level Switching of Triple-layered TaOx RRAM with Excellent Reliability for Storage Class Memory”
    Symposium on VLSI Technology (VLSIT), 2012, pp. 71-72
  19. Ji-Hyun Hur, Kyung Min Kim, Man Chang, Seung Ryul Lee, Dongsoo Lee, Chang Bum Lee, Myoung-Jae Lee, Young-Bae Kim, Chang-Jung Kim and U-In Chung
    “Modeling for multilevel switching in oxide-based bipolar resistive memory”
    Nanotechnology 23, 225702 (2012) – Jun.
  20. Kyung Jean Yoon, Min Hwan Lee, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, Sora Han, Jung Ho Yoon, Kyung Min Kim and Cheol Seong Hwang
    “Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell”
    Nanotechnology 23, 185202 (2012) – May
  21. Jun Yeong Seok, Gun Hwan Kim, Jeong Hwan Kim, Un Ki Kim, Yoon Jang Chung, Seul Ji Song, Jung Ho Yoon, Kyung Jin Yoon, Min Hwan Lee, Kyung Min Kim, and Cheol Seong Hwang
    “Resistive Switching in TiO2 Thin Films Using the Semiconducting In-Ga-Zn-O Electrode”
    IEEE Electron Device Letters 33, 582-584 (2012) – Apr.
  22. Kyung Min Kim, Seungwu Han and Cheol Seong Hwang
    “Electronic bipolar resistance switching in an anti-serially connected Pt/TiO2/Pt structure for improved reliability”
    Nanotechnology 23, 035201 (2012)
  23. Gun Hwan Kim, Jong Ho Lee, Jun Yeong Seok, Seul Ji Song, Jung Ho Yoon, Kyung Jean Yoon, Min Hwan Lee, Kyung Min Kim, Hyung Dong Lee, Seung Wook Ryu, Tae Joo Park, and Cheol Seong Hwang
    “Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magneli filaments”
    Appl. Phys. Lett. 98, 262901 (2011)
  24. Kyung Min Kim, Doo Seok Jeong and Cheol Seong Hwang
    “Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook”
    Nanotechnology 22, 254002 (2011)
  25. Kyung Min Kim, Byung Joon Choi, Min Hwan Lee, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, Jeong Ho Yoon, Seungwu Han, and Cheol Seong Hwang
    “A detailed understanding on the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure”
    Nanotechnology 22 , 254010 (2011)
  26. Kyung Min Kim, Seul Ji Song, Gun Hwan Kim, Jun Yeong Seok, Min Hwan Lee, Jung Ho Yoon, Jucheol Park, and Cheol Seong Hwang
    “Collective motion of conducting filaments in Pt/n-type TiO2/p-type NiO/Pt stacked resistance switching memory”
    Adv. Funct. Mater. 21, 1587–1592 (2011)
  27. Min Hwan Lee, Kyung Min Kim, Seul Ji Song, Sang Ho Rha, Jun Yeong Seok, Ji Sim Jung, Gun Hwan Kim, Jung Ho Yoon, and Cheol Seong Hwang
    “Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy”
    Appl. Phys. A 102, 827 (2011)
  28. Sang Young Lee, Seong Keun Kim, Kyung Min Kim, Gyu-Jin Choi, Jeong Hwan Han, and Cheol Seong Hwang
    “Electrically Benign Ru Wet Etching Method for Fabricating Ru/TiO2/Ru Capacitor”
    J. Electrochem. Soc. 158 (3), G47–G51 (2011)
  29. Jung Ho Yoon, Kyung Min Kim, Min Hwan Lee, Seong Keun Kim, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, and Cheol Seong Hwang
    “Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior”
    Appl. Phys. Lett. 97, 232904 (2010)
  30. Kyung Min Kim, Min Hwan Lee, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon and Cheol Seong Hwang
    “Understanding structure-property relationship of resistive change oxide thin films using a conical filament model”
    Appl. Phys. Lett. 97, 162912 (2010)
  31. Byung Joon Choi, Seol Choi, Taeyong Eom, Sang Ho Rha, Kyung Min Kim, and Cheol Seong Hwang
    “Phase change memory cell using Ge2Sb2Te5 and softly broken-down TiO2 films for multilevel operation”
    Appl. Phys. Lett. 97, 132107 (2010)
  32. Gun Hwan Kim, Kyung Min Kim, Jun Yeong Seok, Hyun Ju Lee, Deok-Yong Cho, Jeong Hwan Han and Cheol Seong Hwang
    “A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory”
    Nanotechnol. 21, 385202 (2010) .
  33. Min Hwan Lee, Seul Ji Song, Kyung Min Kim, Gun Hwan Kim, Jun Yeong Seok, Jung Ho Yoon, and Cheol Seong Hwang
    “Scanning probe based observation of bipolar resistive switching NiO films”
    Appl. Phys. Lett. 97, 062909 (2010)
  34. Kyung Min Kim, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, Min Hwan Lee, Jeong Ho Yoon, and Cheol Seong Hwang
    “Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structure”
    Nanotechnol. 21, 305203 (2010)
  35. Yong Cheol Shin, Min Hwan Lee, Kyung Min Kim, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, and Cheol Seong Hwang
    “Bias polarity dependent local electrical conduction in resistive switching TiO2 thin films”
    Phys. Status Solidi RRL 4, No. 5–6, 112–114 (2010)
  36. Woo Young Park, Gun Hwan Kim, Jun Yeong Seok, Kyung Min Kim, Seul Ji Song,Min Hwan Lee and Cheol Seong Hwang
    “A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays”
    Nanotechnol. 21, 195201 (2010)
  37. Min Hwan Lee, Kyung Min Kim, Gun Hwan Kim, Jun Yeong Seok, Seul Ji Song, Jung Ho Yoon, and Cheol Seong Hwang
    “Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy”
    Appl. Phys. Lett. 96, 152909 (2010) – Apr.
  38. Seul Ji Song, Kyung Min Kim, Gun Hwan Kim, Joon Young Seok, Ranju Jung, and Cheol Seong Hwang
    “Identification of the controlling parameter for the on-state resistance of a TiO2 resistive switching cell”
    Appl. Phys. Lett. 96, 112904 (2010)
  39. Deok-Hwang Kwon, Kyung Min Kim, Jae Hyuck Jang, Jong Myeong Jeon, Min Hwan Lee, Gun Hwan Kim, Xiang-Shu Li, Gyeong-su Park, Bora Lee, Seungwu Han, Miyoung Kim, and Cheol Seong Hwang
    “Atomic structure of conducting nanofilaments in TiO2 resistive switching memory”
    Nature Nanotechnol. 5, 148-153 (2010)
  40. Kyung Min Kim, Sang Young Lee, Gyu Jin Choi, Jeong Hwan Han and Cheol Seong Hwang
    “Electrically benign dry etching method for rutile TiO2 thin film capacitors with Ru electrodes”
    Electrochem. Solid-St. Lett. 13(1). G1-G4 (2010)
  41. Gun Hwan Kim, Kyung Min Kim, Jun Yeong Seok, Min Hwan Lee, Seul Ji Song, and Cheol Seong Hwang
    “Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory”
    J. Electrochem. Soc. 157 (10), G211-G215 (2010)
  42.  Kyung Min Kim, Seul Ji Song, Gun Hwan Kim, Joon Young Seok, Min Hwan Lee, Jin Shi Zhao, and Cheol Seong Hwang
    “Methods of Set Switching for Improving the Uniformity of Filament Formation in the TiO2 Thin Film”
    Electrochem. Solid-St. Lett. 13(6), G51-G53 (2010)
  43. Kyung Min Kim and Cheol Seong Hwang
    “The conical shape filament growth model in unipolar resistance switching of TiO2 thin film”
    Appl. Phys. Lett. 94, 122109 (2009)
  44. Kyung Min Kim, Byung Joon Choi, Seul Ji Song, Gun Hwan Kim, and Cheol Seong Hwang
    “Filamentary resistive switching localized at cathode interface in NiO thin films”
    J. Electrochem. Soc., 156(12), G213-G216 (2009)
  45. Byung Joon Choi, Seung Hwan Oh, Seol Choi, Taeyong Eom, Yong Cheol Shin, Kyung Min Kim, Kyung-Woo Yi, Cheol Seong Hwang, Yoon Jung Kim, Hae Chan Park, Tae Sun Baek, and Suk Kyoung Hong
    “Switching Power Reduction in Phase Change Memory Cell Using CVD Ge2Sb2Te5 and Ultrathin TiO2 Films”
    J. Electrochem. Soc. 156(1), H59-H63 (2009)
  46. Yong Cheol Shin, Jaewon Song, Kyung Min Kim, Byung Joon Choi, Seol Choi, Hyun Ju Lee, Gun Hwan Kim, Taeyong Eom, and Cheol Seong Hwang
    “(In,Sn)2O3/TiO2/Pt Schottky-type diode switch for the TiO2 resistive switching memory array”
    Appl. Phys. Lett. 92, 162904 (2008)
  47. Byung Joon Choi, Seol Choi, Yong Cheol Shin, Kyung Min Kim, Cheol Seong Hwang, Yoon Jung Kim, Young Jin Son, and Suk Kyoung Hong
    “Combined Atomic Layer and Chemical Vapor Deposition, and Selective Growth of Ge2Sb2Te5 Films on TiN/W Contact Plug”
    Chem. Mater. 19, 4387-4389 (2007)
  48. Kyung Min Kim, Byung Joon Choi, Yong Cheol Shin, Seol Choi, and Cheol Seong Hwang
    “Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films”
    Appl. Phys. Lett. 91, 012907 (2007)
  49. Kyung Min Kim, Byung Joon Choi, and Cheol Seong Hwang
    “Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films”
    Appl. Phys. Lett. 90, 242906 (2007)
  50. Kyung Min Kim, Minha Seo, Byung Joon Choi, Seong Keun Kim, and Cheol Seong Hwang
    “Characteristics of a Capacitive Probe Array for Direct Surface Charge Detection”
    Electrochem. and Solid-St. Lett. 10 (1), H34-H37 (2007)
  51.  Kyung Min Kim, Byung Joon Choi, Doo Seok Jeong, Cheol Seong Hwang, and Seungwu Han
    “Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes”
    Appl. Phys. Lett. 89, 162912 (2006)
  52. Byung Joon Choi, Seol Choi, Kyung Min Kim, Yong Cheol Shin, Cheol Seong Hwang, Sung-Yeon Hwang, Sung-sil Cho, Sanghyun Park, and Suk-Kyoung Hong
    “Study on the resistive switching time of TiO2 thin films”
    Appl. Phys. Lett. 89, 012906 (2006)
  53. Kyung Min Kim, Byung Joon Choi, Bon Wook Koo, Seol Choi, Doo Seok Jeong, and Cheol Seong Hwang
    “Resistive Switching in Pt/Al2O3/TiO2/Ru Stacked Structures”
    Electrochemical and Solid-State Lett. 9(12), G343-G346 (2006)
  54. Seong Keun Kim, Kyung-Min Kim, Oh Seong Kwon, Sang Woon Lee, Chung Bae Jeon, Woo Young Park, Cheol Seong Hwang, and Jaehack Jeong
    “Structurally and Electrically Uniform Deposition of High-k TiO2 Thin Films on a Ru Electrode in Three-Dimensional Contact Holes Using Atomic Layer Deposition”
    Electrochem. Solid St. Lett. 8(12), F59-F62 (2005)
  55. Kyung Min Kim, Byung Joon Choi, Seong Keun Kim, and Cheol Seong Hwang
    “Fabrication of metal-oxide-semiconductor type micro capacitive tip array using SiO2 or HfO2 gate insulators”
    Appl. Phys. Lett. 85 (22), 5412 (2004)
    Virtual Journal of Nanoscale Science & Technology, 10 (2004)
  56. Seong Keun Kim, Kyung Min Kim, Wan don Kim and Cheol Seong Hwang
    “High dielectric constant TiO2 thin films on Ru electrode grown at 250oC by atomic-layer-deposition”
    Appl. Phys. Lett. 85 (18), 4112 (2004)
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