Memristor Materials & Process

Improvement of memeristor performance and reliability is also important object by selection suitable material and processing. The important performances of memristor are switching speed, retention time, endurance, uniformity, on/off ratio, and etc.

Nowadays, oxide based memristors, which are TiOx, TaOx, NbOx and HfOx, are mostly used because of their high performances such as fast switching speed, long retention time, endurance and uniformity. 

We are studying to improve these performances based on each memristive mechanism or finding better materials. Uniformity is crucial for increasing reliability of memristor. The research about random diffusion, random direction filament growth, and constant set/reset state are valuable to achieve our goal.

It is also considerble way to control conditions of thin film technology processing such as Atomic Layer deposition(ALD), sputtering, and other processing. we can find more industrially efficient method about cost, time and performance of memristor.

Also, functional memristor device is being developed like self-rectifying, forming-free device considering each characteristic of memristor material.

For degree of integration improvement, all of material must be able to construct crossbar array. However, crossbar array has a big problem due to sneak current by memristor. There are a lot of researches to solve sneak path problem. One of that, we are studying on the selector which help to have ultra nonlinear characteristic.